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| CMPT5551 NPN SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. Marking Code is 1FF. Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 180 160 6.0 600 350 -65 to +150 357 UNITS V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob TEST CONDITIONS VCB=120V VCB=120V, TA=100oC IC=100A IC=1.0mA IE=10A IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN MAX 50 50 UNITS nA A V V V V V V V 180 160 6.0 0.15 0.20 1.00 1.00 80 80 30 100 250 300 6.0 MHz pF 186 SYMBOL hfe NF TEST CONDITIONS VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200A, RS=10 f=10Hz to 15.7kHz MIN 50 MAX 200 8.0 UNITS dB All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 187 |
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